Model/Brand/Package
Category/Description
Inventory
Price
Data
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Category: Schottky diodeDescription: Standard recovery rectifier, with industrial standard packaging types for multi-purpose, high-efficiency standard recovery power diodes exceeding 40A. ###Diodes and rectifiers, Vishay Semiconductor30381+$271.305710+$264.228250+$258.8020100+$256.9147200+$255.4992500+$253.61191000+$252.43232000+$251.2527 -
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Category: Schottky diodeDescription: Standard recovery rectifier, with industrial standard packaging types for multi-purpose, high-efficiency standard recovery power diodes exceeding 40A. ###Diodes and rectifiers, Vishay Semiconductor69201+$260.744110+$253.942150+$248.7272100+$246.9133200+$245.5529500+$243.73911000+$242.60542000+$241.4717 -
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Category: Schottky diodeDescription: Semiconductor, Power Diode; Schottky Rectifier; 200A; 150V; ADD-A-PAK; GEN 554911+$355.471910+$346.198750+$339.0893100+$336.6164200+$334.7618500+$332.28901000+$330.74342000+$329.1979 -
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Category: Schottky diodeDescription: High performance Schottky rectifier, 50A to 400A, Vishay Semiconductor Schottky rectifier is a semiconductor diode with extremely low forward voltage drop and very fast switching function. The reverse recovery time of Schottky diodes is very fast. Schottky diodes are suitable for applications that require fast switching and low power consumption. Low forward voltage reduces thermal resistance # # Schottky rectifier, Vishay Semiconductor97701+$544.761910+$530.550750+$519.6555100+$515.8658200+$513.0236500+$509.23401000+$506.86542000+$504.4969 -
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Category: Schottky diodeDescription: Standard recovery rectifier, with industrial standard packaging types for multi-purpose, high-efficiency standard recovery power diodes exceeding 40A. ###Diodes and rectifiers, Vishay Semiconductor60721+$293.386910+$285.733350+$279.8655100+$277.8246200+$276.2939500+$274.25291000+$272.97732000+$271.7017 -
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Category: Schottky diodeDescription: Standard recovery rectifier, with industrial standard packaging types for multi-purpose, high-efficiency standard recovery power diodes exceeding 40A. ###Diodes and rectifiers, Vishay Semiconductor28341+$269.652010+$262.617650+$257.2246100+$255.3487200+$253.9418500+$252.06601000+$250.89362000+$249.7212 -
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Category: Schottky diodeDescription: 40A Multi purpose, high-efficiency standard recovery power diodes using industrial standard packaging types. ###Diodes and rectifiers, Vishay Semiconductor48361+$318.399410+$310.093350+$303.7253100+$301.5103200+$299.8491500+$297.63421000+$296.24982000+$294.8655 -
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Category: Schottky diodeDescription: Standard recovery rectifier, with industrial standard packaging types for multi-purpose, high-efficiency standard recovery power diodes exceeding 40A. ###Diodes and rectifiers, Vishay Semiconductor95441+$245.232910+$238.835550+$233.9309100+$232.2249200+$230.9454500+$229.23951000+$228.17322000+$227.1070 -
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Category: Schottky diodeDescription: IGBT Module, Vishay's high-efficiency IGBT module comes with PT, NPT, and Trench IGBT technology options. This series includes single switch, inverter, chopper, half bridge or with custom configuration. These IGBT modules are designed to serve as primary switching devices in switch mode power supplies, uninterruptible power supplies, industrial welding, motor drive, and power factor correction systems. Typical applications include: boost and buck converters, forward and double forward converters, half bridge, full bridge (H-bridge), and three-phase bridge. A wide range of industrial standard packaging types are available for direct installation on heat sinks, including PT, NPT, and Trench IGBT technologies. The low VCE (on) IGBT switching frequency ranges from 1 kHz to 150 kHz, with robust instantaneous performance and high isolation voltage up to 3500 V, 100% lead-free (Pb), and RoHS compliant low thermal resistance. The IGBT module, Vishay insulated gate level bipolar transistor or IGBT, is a three terminal power semiconductor device known for its efficient and fast switching. IGBT combines the simple gate driving characteristics of MOSFETs with the high current and low saturation voltage capabilities of bipolar transistors by combining isolated gate FETs used for input control and bipolar power transistors used as switches in a single device.50981+$333.877210+$325.167450+$318.4898100+$316.1672200+$314.4252500+$312.10261000+$310.65102000+$309.1993
